SI2347DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – Notebook Adaptor Switch

P-Channel 30 V (D-S) MOSFET
Si2347DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
I_D (A)^a
0.042 at V_GS = - 10 V
-5
- 30
0.054 at V_GS = - 6 V
- 4.4
0.068 at V_GS = - 4.5 V
- 3.9
Q_g (Typ.)
6.9 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
• DC/DC Converter
• Power Management
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2347DS (F7)*
* Marking Code
Ordering Information: Si2347DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
- 30
± 20
-5
-4
- 3.8^b,c
- 3^b,c
- 20
- 1.4
- 0.63^b,c
1.7
1.1
1.20^{b, c}
0.6^{b, c}
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 62827
For technical questions, contact: [e-mail]
www.vishay.com
S13-0111-Rev. A, 21-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000