SI2343DS-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si2343DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.053 at V_GS = - 10 V
0.086 at V_GS = - 4.5 V
I_D (A)
- 4.0
- 3.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2343DS (F3)*
* Marking Code
Ordering Information: Si2343DS-T1
Si2343DS-T1-E3 (Lead (Pb)-free)
Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
- 30
Gate-Source Voltage
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
- 4.0
- 3.2
- 3.1
- 2.5
Pulsed Drain Current
I_DM
- 15
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.0
- 0.6
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
Typical
75
120
40
Maximum
100
166
50
Unit
°C/W
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