SI2338DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
N-Channel 30 V (D-S) MOSFET
Si2338DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.028 at V_GS = 10 V
30
0.033 at V_GS = 4.5 V
SOT-23
I_D (A)^{a, e}
6
6
Q_g (Typ.)
4.2 nC
G1
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Low On-Resistance
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters, High Speed Switching
D
(3)
S2
Top View
Marking Code
E8 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si2338DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
6^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6^e
5.5^{b, c}
T_A = 70 °C
4.4^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
25
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.1
1.1^{b, c}
T_C = 25 °C
2.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.6
1.3^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
R_thJA
R_thJF
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 67877
www.vishay.com
S11-0864-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000