SI2337DS-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 80-V (D-S) MOSFET

P-Channel 80-V (D-S) MOSFET
Si2337DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 80
0.270 at V_GS = - 10 V
0.303 at V_GS = - 6 V
I_D (A)^a
- 2.2
- 2.1
Q_g (Typ.)
7
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
TO-236
(SOT-23)
G1
S2
3D
S
G
Top View
Si2337DS (E7)*
* Marking Code
Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)
Si2337DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 80
V
V_GS
± 20
T_C = 25 °C
- 2.2
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 1.75
- 1.2^{b, c}
Pulsed Drain Current
T_A = 70 °C
- 0.96^{b, c}
A
I_DM
-7
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 2.1
- 0.63^{b, c}
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
I_AS
11
E_AS
6.0
mJ
T_C = 25 °C
2.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.6
0.76^{b, c}
W
T_A = 70 °C
0.48^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 50 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 166 °C/W.
Document Number: 73533
S09-0133-Rev. D, 02-Feb-09
Symbol
R_thJA
R_thJF
Typical
120
40
Maximum
166
50
Unit
°C/W
www.vishay.com
1