SI2335DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si2335DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
–12
r_DS(on) (W)
0.051 @ V_GS = –4.5 V
0.070 @ V_GS = –2.5 V
0.106 @ V_GS = –1.8 V
I_D (A)
–4.0
–3.5
–3.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2335DS (E5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–12
V_GS
$8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–4.0
–3.2
–3.3
–2.6
–15
–1.6
1.25
0.75
0.8
0.48
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71314
S-02303—Rev. A, 23-Oct-00
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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