SI2334DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
N-Channel 30 V (D-S) MOSFET
Si2334DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) ()
0.044 at V_GS = 4.5 V
0.050 at V_GS = 2.5 V
I_D (A)^a
4.9
4.6
Q_g (Typ.)
3.7 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2334DS (PS)*
* Marking Code
Ordering Information: Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
±8
T_C = 25 °C
4.9
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.9
4.2^{b, c}
T_A = 70 °C
3.4^{b, c}
A
Pulsed Drain Current
I_DM
10
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.4
1.1^{b, c}
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
1.3^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
60
Maximum
100
75
Unit
°C/W
Document Number: 66802
S10-1533-Rev. A, 19-Jul-10
www.vishay.com
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