SI2333DDS_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

P-Channel 12 V (D-S) MOSFET
Si2333DDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
- 12
R_DS(on) () Max.
0.028 at V_GS = - 4.5 V
0.032 at V_GS = - 3.7 V
0.040 at V_GS = - 2.5 V
I_D (A)^a
- 6^e
- 6^e
- 6^e
0.063 at V_GS = - 1.8 V
- 4.5
0.150 at V_GS = - 1.5 V
- 3.6
Q_g (Typ.)
9 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Smart Phones and Tablet PCs
- Load Switch
- Battery Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2333DDS (O4)*
* Marking Code
Ordering Information: Si2333DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
- 12
V
±8
- 6^e
- 5.2
- 5^{b, c}
T_A = 70 °C
- 4^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
- 20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 1.4
- 0.63^{b, c}
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
W
1.20^{b, c}
T_A = 70 °C
0.6^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
e. Package limited.
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 63861
For technical support, please contact: [e-mail]
www.vishay.com
S12-0801-Rev. A, 16-Apr-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000