SI2333CDS-T1-GE3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET
Si2333CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^a
0.035 at V_GS = - 4.5 V
- 5.1
- 12
0.045 at V_GS = - 2.5 V
- 4.5
0.059 at V_GS = - 1.8 V
- 3.9
Q_g (Typ.)
9 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2333CDS (O3)*
* Marking Code
Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)
Si2333CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
40
Limit
- 12
±8
- 7.1
- 5.7
- 5.1^{b, c}
- 4.0^{b, c}
- 20
- 1.0
- 0.63^{b, c}
2.5
1.6
1.25^{b, c}
0.8^{b, c}
- 55 to 150
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
www.vishay.com
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