SI2328DS_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET
Si2328DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
100
r_DS(on) (W)
0.250 @ V_GS = 10 V
I_D (A)
1.5
FEATURES
D 100% R_g Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2328DS (D8)*
*Marking Code
Ordering Information: Si2328DS-T1
Si2328DS-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Avalanche Current^b
Single Avalanche Energy
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
L = 0.1 mH
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
100
"20
1.5
1.15
1.2
0.92
6
6
1.8
0.6
1.25
0.73
0.80
0.47
−55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71796
S-41259—Rev. C, 05-Jul-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
80
130
45
Maximum
100
170
55
Unit
_C/W
www.vishay.com
1