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SI2325DS Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET | |||
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New Product
P-Channel 150-V (D-S) MOSFET
Si2325DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
â150
rDS(on) (W)
1.2 @ VGS = â10 V
1.3 @ VGS = â6.0 V
ID (A)
â0.69
â0.66
Qg (Typ)
7.7
FEATURES
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2325DS -T1âE3
Top View
Si2325DS (D5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
â150
VGS
$20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Single-Pluse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 1.0 mH
TA = 25_C
TA = 70_C
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
â0.69
â0.55
â1.0
1.25
0.8
â1.6
4.5
1.01
â55 to 150
â0.53
â0.43
â0.6
0.75
0.48
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73238
S-42449âRev. A, 10-Jan-05
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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