SI2323DS_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si2323DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.039 at V_GS = - 4.5 V
- 20
0.052 at V_GS = - 2.5 V
0.068 at V_GS = - 1.8 V
I_D (A)
- 4.7
- 4.1
- 3.5
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
• PA Switch
Pb-free
Available
RoHS*
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2323DS (D3)*
* Marking Code
Ordering Information: Si2323DS-T1
Si2323DS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
- 4.7
- 3.8
- 3.7
- 2.9
A
Pulsed Drain Current
I_DM
- 20
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.0
- 0.6
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
Typical
75
120
40
Maximum
100
166
50
Unit
°C/W
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