SI2323DS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si2323DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
-20
r_DS(on) (W)
0.039 @ V_GS = -4.5 V
0.052 @ V_GS = -2.5 V
0.068 @ V_GS = -1.8 V
I_D (A)
-4.7
- 4.1
- 3.5
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2323DS (D3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
-20
V_GS
$8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 4.7
-3.7
-3.8
-2.9
-20
-1.0
-0.6
1.25
0.75
0.8
0.48
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 72024
S-22121—Rev. B, 25-Nov-02
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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