SI2323DS-RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si2323DS_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
RT1
65.0615
RT2
47.9253
RT3
41.1729
RT4
9.6980
Thermal Capacitance (Joules/°C)
Junction to
Ambient
CT1
1.1655
CT2
17.3479 m
CT3
3.0586 m
CT4
582.7750 µ
Case
N/A
N/A
N/A
N/A
Case
N/A
N/A
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73620
Revision 22-Aug-05
www.vishay.com
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