SI2323DDS Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si2323DDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.039 at V_GS = - 4.5 V
- 20
0.050 at V_GS = - 2.5 V
0.075 at V_GS = - 1.8 V
TO-236
(SOT-23)
I_D (A)^d
- 5.3
- 4.7
- 3.8
Q_g (Typ.)
13.6 nC
G1
S2
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• PA Switch
• DC/DC Converters
• Power Management
S
G
Top View
Si2323DDS (E4)*
* Marking Code
Ordering Information:
Si2323DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
T_C = 25 °C
- 5.3
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 4.3
- 4.1^a,b
T_A = 70 °C
- 3.2^a,b
A
Pulsed Drain Current (t = 300 µs)
I_DM
- 20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 1.4
- 0.8^a,b
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
0.96^a,b
W
T_A = 70 °C
0.62^a,b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T_C = 25 °C.
t5s
Steady State
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 64004
For technical questions, contact: [e-mail]
www.vishay.com
S13-1165-Rev. A, 13-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000