SI2323CDS-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET
Si2323CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
I_D (A)^a
0.039 at V_GS = -4.5 V
-6^e
-20
0.050 at V_GS = -2.5 V
-5.8
0.063 at V_GS = -1.8 V
-5.1
Q_g (Typ.)
9 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• PA Switch
• DC/DC Converters
Top View
Si2323CDS (P3)*
* Marking Code
Ordering Information:
Si2323CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
T_C = 25 °C
-20
V
±8
-6^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
-5.2
-4.6^{b, c}
-3.7^{b, c}
A
Pulsed Drain Current
I_DM
-20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
-2.1
-1^{b, c}
T_C = 25 °C
2.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
1.6
1.25^{b, c}
W
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Symbol
R_thJA
R_thJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 65700
For technical questions, contact: [e-mail]
www.vishay.com
S13-2081-Rev. B, 30-Sep-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000