SI2321DS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si2321DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 20
r_DS(on) (W)
0.057 @ V_GS = - 4.5 V
0.076 @ V_GS = - 2.5 V
0.110 @ V_GS = - 1.8 V
I_D (A)
- 3.3
- 2.8
- 2.3
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D PA Switch
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2321DS-T1
Top View
Si2321DS *(D1)
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 3.3
- 2.6
- 0.74
0.89
0.57
- 20
"8
- 12
- 55 to 150
- 2.9
- 2.3
- 0.59
0.71
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t  5 sec.
Steady State
R_thJA
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72210
S-03986—Rev. A, 19-May-03
Typical
115
140
60
Maximum
140
175
75
Unit
_C/W
www.vishay.com
1