SI2321DS-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si2321DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.057 at V_GS = - 4.5 V
- 20
0.076 at V_GS = - 2.5 V
0.110 at V_GS = - 1.8 V
I_D (A)
- 3.3
- 2.8
- 2.3
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETS
APPLICATIONS
• Load Switch
• PA Switch
Top View
Si2321DS *(D1)
* Marking Code
Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free)
Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
- 20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
- 3.3
- 2.6
- 2.9
- 2.3
Pulsed Drain Current
I_DM
- 12
Continuous Source Current (Diode Conduction)^a
I_S
- 0.74
- 0.59
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.89
0.71
0.57
0.45
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
RoHS
COMPLIANT
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
115
140
60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72210
S-80642-Rev. B, 24-Mar-08
Maximum
140
175
75
Unit
°C/W
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