SI2320DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
Si2320DS
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
200
7 @ V_GS = 10 V
I_D (A)
"0.28
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2320DS (D0)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Avalanche Current^b
Single Avalanche Energy
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
L = 0.1 mH
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
"200
"20
"0.28
"0.22
"0.22
"0.17
"0.5
"0.5
0.013
"1
1.25
0.75
0.80
0.48
–55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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