SI2319DS Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

P-Channel 40-V (D-S) MOSFET
Si2319DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.082 @ V_GS = −10 V
−40
0.130 @ V_GS = −4.5 V
I_D (A)^b
−3.0
−2.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2319DS (C9)*
*Marking Code
Ordering Information: Si2319DS-T1
Si2319DS-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^b
Power Dissipation^b
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−3.0
−2.4
−1.0
1.25
0.8
−40
"20
−12
−55 to 150
−2.3
−1.85
−0.62
0.75
0.48
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^b
Maximum Junction-to-Ambient^c
R_thJA
Maximum Junction-to-Foot (Drain)
R_thJF
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72315
S-40844—Rev. B, 03-May-04
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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