SI2319CDS_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

P-Channel 40 V (D-S) MOSFET
Si2319CDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.077 at V_GS = - 10 V
- 40
0.108 at V_GS = - 4.5 V
I_D (A)^a
- 4.4
- 3.7
Q_g (Typ.)
7 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
S
G
Top View
Si2319CDS (P7)*
* Marking Code
Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 40
± 20
- 4.4
- 3.5
- 3.1^{b, c}
- 2.5^{b, c}
- 20
- 2.1
- 1^{b, c}
2.5
1.6
1.25^{b, c}
0.8^{b, c}
- 55 to 150
D
P-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 66709
S10-1286-Rev. A, 31-May-10
www.vishay.com
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