SI2318DS_13 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET
Si2318DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
40
R_DS(on) (Ω)
0.045 at V_GS = 10 V
0.058 at V_GS = 4.5 V
I_D (A)
3.9
3.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Stepper Motors
• Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2318DS( C8)*
*Marking Code
Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free)
Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
3.9
3.0
3.1
2.4
A
Pulsed Drain Current^b
I_DM
16
Continuous Source Current (Diode Conduction)^{a, b}
I_S
0.8
Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature
Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
°C/W
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