SI2318CDS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

New Product
N-Channel 40 V (D-S) MOSFET
Si2318CDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.042 at V_GS = 10 V
40
0.051 at V_GS = 4.5 V
I_D (A)^a
5.6
5.1
Q_g (Typ.)
2.9 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-23
• DC/DC Converters
• Load Switch
• Portable and Consumer Applications
D
(3)
G1
S2
3D
Top View
Marking Code
P9 XXX
Lot Traceability
and Date Code
Part # Code
G
(1)
(2)
S
Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
40
± 20
5.6^a
4.5
4.3^{b, c}
3.5^{b, c}
20
1.75
1.04^{b, c}
2.1
1.3
1.25^{b, c}
0.8^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
40
Maximum
100
60
Unit
V
A
W
°C
Unit
°C/W
Document Number: 67030
S10-2250-Rev. A, 04-Oct-10
www.vishay.com
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