SI2316DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si2316DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.050 @ V_GS = 10 V
0.085 @ V_GS = 4.5 V
I_D (A)
3.4
2.6
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Battery Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2316DS (C6)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^{a, b}
Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
3.4
2.9
2.7
2.3
16
0.8
0.96
0.7
0.6
0.45
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
100
140
60
Maximum
130
175
75
Unit
V
A
W
_C
Unit
_C/W
Document Number: 71798
S-05481—Rev. A, 21-Jan-02
www.vishay.com
1