SI2315BDS-T1 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si2315BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.050 at V_GS = - 4.5 V
- 12
0.065 at V_GS = - 2.5 V
0.100 at V_GS = - 1.8V
I_D (A)
- 3.85
- 3.4
- 2.7
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs: 1.8 V Rated
Pb-free
Available
RoHS*
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2315BDS *(M5)
* Marking Code
Ordering Information: Si2315BDS-T1
Si2315BDS-T1-E3 (Lead (Pb)-free)
Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^a
T_A = 25 °C
T_A = 70 °C
I_D
- 3.85
- 3.0
- 3.0
- 2.45
A
I_DM
- 12
Continuous Source Current (Diode Conduction)^a
I_S
- 1.0
- 0.62
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.19
0.75
0.76
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^a
t≤5s
Steady State
R_thJA
85
130
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
60
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
Max.
105
166
75
Unit
°C/W
www.vishay.com
1