SI2314EDS-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si2314EDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.033 at V_GS = 4.5 V
0.040 at V_GS = 2.5 V
0.051 at V_GS = 1.8 V
I_D (A)
4.9
4.4
3.9
TO-236
(SOT-23)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• ESD Protected: 3000 V
APPLICATIONS
• LI-lon Battery Protection
D
G1
S2
3D
Top View
Si2314EDS (C4)*
*Marking Code
Ordering Information: _{Si2314EDS-T1-E3 (Lead (Pb)-free)}
Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
3 kΩ
G
S
N-Channel
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
T_A = 25 °C
T_A = 70 °C
I_D
4.9
3.77
3.9
3.0
A
I_DM
15
Avalanche Current^b
Single Avalanche Energy
I_AS
15
L = 0.1 mH
E_AS
11.25
mJ
Continuous Source Current (Diode Conduction)^a
I_S
1.0
A
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.80
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
°C/W
Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
www.vishay.com
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