SI2312BDS Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.031 at V_GS = 4.5 V
20
0.037 at V_GS = 2.5 V
0.047 at V_GS = 1.8 V
I_D (A)
5.0
4.6
4.1
Q_g (Typ.)
7.5
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2312BDS (M2)*
* Marking Code
Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free)
Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
5.0
3.9
4.0
3.1
Pulsed Drain Current^b
I_DM
15
Avalanche Current^b
Single Avalanche Energy
I_AS
L = 0.1 mH
E_AS
13
8.45
Continuous Source Current (Diode Conduction)^a
I_S
1.0
0.63
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.80
0.48
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
80
120
50
Maximum
100
166
60
Unit
°C/W
Document Number: 73235
S-80642-Rev. B, 24-Mar-08
www.vishay.com
1