SI2311DS-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si2311DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.045 at V_GS = - 4.5 V
-8
0.072 at V_GS = - 2.5 V
0.120 at V_GS = - 1.8 V
I_D (A)
- 3.5
- 2.8
- 2.0
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2311DS (C1)*
* Marking Code
Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free)
Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
- 3.5
- 2.8
- 3.0
- 2.4
A
Pulsed Drain Current
I_DM
- 10
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 0.8
- 0.6
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
0.96
0.71
0.62
0.46
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Document Number: 71813
S-80642-Rev. B, 24-Mar-08
Typical
100
140
60
Maximum
130
175
75
Unit
°C/W
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