SI2309DS_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET
Si2309DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 60
0.340 at V_GS = - 10 V
0.550 at V_GS = - 4.5 V
I_D (A)
- 1.25
-1
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2309DS (A9)*
* Marking Code
Ordering Information: Si2309DS-T1
Si2309DS-T1-E3 (Lead (Pb)-free)
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
- 1.25
- 0.85
A
Pulsed Drain Current
I_DM
-8
Avalanche Current
L = 0.1 mH
I_AS
-5
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.8
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Lead^a
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 s.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJL
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70835
S-72216-Rev. C, 22-Oct-07
Typical
130
45
Maximum
100
166
60
Unit
°C/W
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