SI2309DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET
Si2309DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.340 @ V_GS = -10 V
-60
0.550 @ V_GS = -4.5 V
I_D (A)
- 1.25
-1
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2309DS (A9)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Avalanche Current
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
P_D
T_J, T_stg
-60
"20
-1.25
-0.85
-8
-5
1.25
0.8
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Lead^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Document Number: 70835
S-21339—Rev. B, 05-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJL
Typical
130
45
Maximum
100
166
60
Unit
_C/W
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