SI2306DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si2306DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.057 @ V_GS = 10 V
0.094 @ V_GS = 4.5 V
-
I_D (A)
3.5
2.8
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
"20
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
3.5
2.8
16
1.25
1.25
0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
t v 5 sec
Steady State
Symbol
R_thJA
Typical
130
Maximum
100
Unit
_C/W
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