SI2306BDS Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si2306BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.047 at V_GS = 10 V
0.065 at V_GS = 4.5 V
I_D (A)
4.0
3.5
Q_g (Typ.)
3.0
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2306BDS (L6 )*
* Marking Code
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
4.0
3.16
3.5
2.7
A
Pulsed Drain Current
I_DM
20
Continuous Source Current (Diode Conduction)^{a, b}
I_S
1.04
0.62
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.75
0.8
0.48
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
Symbol
R_thJA
R_thJF
Typical
80
130
60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
Maximum
100
166
75
Unit
°C/W
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