SI2305DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
–8
r_DS(on) (W)
0.052 @ V_GS = –4.5 V
0.071 @ V_GS = –2.5 V
0.108 @ V_GS = –1.8 V
I_D (A)
"3.5
"3
"2
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2305DS (A5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–8
V_GS
"8
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"3.5
"2.8
"12
–1.6
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
Document Number: 70833
S-56947—Rev. C, 28-Dec-98
t v 5 sec
Steady State
Symbol
R_thJA
Typical
130
Maximum
100
Unit
_C/W
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