SI2305DS-T1 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.052 at V_GS = - 4.5 V
-8
0.071 at V_GS = - 2.5 V
0.108 at V_GS = - 1.8 V
I_D (A)
± 3.5
±3
±2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs: 1.8 V Rated
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2305DS (A5)*
* Marking Code
Ordering Information: Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)
Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
± 3.5
± 2.8
A
Pulsed Drain Current
I_DM
± 12
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.6
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.25
0.8
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
t≤5s
Steady State
Symbol
R_thJA
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
Typical
130
Maximum
100
Unit
°C/W
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