SI2305CDS-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.035 at V_GS = - 4.5 V
-8
0.048 at V_GS = - 2.5 V
0.065 at V_GS = - 1.8 V
I_D (A)^d
- 5.8
- 5.0
- 4.3
Q_g (Typ.)
12 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2305CDS (N5)*
* Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converter
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±8
T_C = 25 °C
- 5.8
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 4.7
- 4.4^{a, b}
T_A = 70 °C
- 3.5^{a, b}
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
- 20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 1.4
- 0.8^{a, b}
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
0.96^{a, b}
W
T_A = 70 °C
0.62^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T_C = 25 °C.
t≤5s
Steady State
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
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