SI2305ADS Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 8-V (D-S) MOSFET

New Product
P-Channel 8-V (D-S) MOSFET
Si2305ADS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.040 at V_GS = - 4.5 V
-8
0.060 at V_GS = - 2.5 V
0.088 at V_GS = - 1.8 V
I_D (A)
- 4.1
- 3.4
- 2.0
Q_g (Typ.)
7.8 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch
• DC/DC Converter
S
G
Top View
Si2305ADS (A5)*
* Marking Code
Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)
Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
I_S
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
Limit
-8
±8
- 5.4
- 4.3
- 4.1^{a, b}
- 3.3^{a, b}
- 10
- 1.4
- 0.8^{a, b}
1.7
1.1
0.96^{a, b}
0.62^{a, b}
- 50 to 150
260
RoHS
COMPLIANT
Unit
V
A
W
°C
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
www.vishay.com
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