SI2304BDS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si2304BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.070 @ V_GS = 10 V
30
0.105 @ V_GS = 4.5 V
I_D (A)
3.2
2.6
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2304BDS (L4)*
*Marking Code
Ordering Information: Si2304BDS-T1—E3
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
$20
3.2
2.6
2.5
2.1
10
0.9
0.62
1.08
0.75
0.69
0.48
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
R_thJA
R_thJF
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S-32412—Rev. B, 24-Nov-03
Typical
90
130
60
Maximum
115
166
75
Unit
_C/W
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