SI2303DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si2303DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.240 @ V_GS = –10 V
0.460 @ V_GS = –4.5 V
I_D (A)
–1.7
–1.3
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303DS (A3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–30
V_GS
"20
Continuous Drain Current (T_J = 150_C)
(surface mounted on FR4 board, t v 5 sec)
Pulsed Drain Current^a
Continuous Source Current (MOSFET Diode Conduction)
(surface mounted on FR4 board, t v 5 sec)
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–1.7
–1.4
–10
–1.25
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (surface mounted on FR4 board, t v 5 sec)
Maximum Junction-to-Ambient (surface mounted on FR4 board)
Symbol
R_thJA
Notes
a. Pulse width limited by maximum junction temperature.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70770
S-49557—Rev. B, 27-Apr-98
Typical
100
166
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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