SI2303CDS-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si2303CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^a
0.190 at V_GS = - 10 V
- 2.7
- 30
0.330 at V_GS = - 4.5 V
- 2.1
Q_g (Typ.)
2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303CDS (N3)*
* Marking Code
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
- 30
± 20
- 2.7
- 2.2
- 1.9^{b, c}
- 1.5^{b, c}
- 10
- 1.75
- 0.83^{b, c}
-5
1.25
2.3
1.5
1.0^{b, c}
0.7^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
Symbol
R_thJA
R_thJF
Typical
80
35
Maximum
120
55
Unit
°C/W
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