SI2303BDS_RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

Si2303BDS_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
40.9471
N/A
RT2
90.1932
N/A
RT3
38.5858
N/A
RT4
5.2739
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
1.6877
N/A
CT2
12.5004 m
N/A
CT3
1.8943 m
N/A
CT4
132.4314 u
N/A
Foot
25.8832
12.8887
35.7078
3.5203
Foot
9.6862 m
2.2361 m
20.7116 m
125.9647 u
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74985
Revision 13-Mar-07
www.vishay.com
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