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SI2303ADS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel, 30-V (D-S) MOSFET | |||
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New Product
P-Channel, 30-V (D-S) MOSFET
Si2303ADS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.240 @ VGS = â10 V
â30
0.460 @ VGS = â4.5 V
ID (A)b
â1.4
â1.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303DS (3A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â30
"20
â1.4
â1.3
â1.1
â1.0
â10
â0.75
â0.6
0.9
0.7
0.57
0.45
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71837
S-20617âRev. B, 29-Apr-02
Typical
115
140
Maximum
140
175
Unit
_C/W
www.vishay.com
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