SI2302ADS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 1.25-W, 2.5-V MOSFET

Si2302ADS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.060 @ V_GS = 4.5 V
20
0.115 @ V_GS = 2.5 V
I_D (A)
2.4
2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302DS (2A)*
*Marking Code
Ordering Information: Si2302ADS-T1
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
8
2.4
2.1
1.9
1.7
10
0.94
0.6
0.9
0.7
0.57
0.46
--55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t ± 5 sec.
Steady State
R_thJA
Notes
a. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Typical
115
140
Maximum
140
175
Unit
_C/W
Document Number: 71831
S-41772—Rev. D, 20-Sep-04
www.vishay.com
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