SI2302ADS-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si2302ADS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.060 at V_GS = 4.5 V
0.115 at V_GS = 2.5 V
I_D (A)
2.4
2.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302ADS (2A)*
* Marking Code
Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free)
Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^a
T_A = 25 °C
T_A = 70 °C
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
±8
2.4
2.1
1.9
1.7
10
0.94
0.6
0.9
0.7
0.57
0.46
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Symbol
R_thJA
Typical
115
140
Notes:
a. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm
Maximum
140
175
Unit
V
A
W
°C
Unit
°C/W
Document Number: 71831
www.vishay.com
S11-2000-Rev. J, 10-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000