SI2301DS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.25-W, 2.5-V MOSFET

Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.130 @ V_GS = - 4.5 V
- 20
0.190 @ V_GS = - 2.5 V
I_D (A)
- 2.3
- 1.9
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^b
Power Dissipation^b
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 20
"8
- 2.3
- 1.5
- 10
- 1.6
1.25
0.8
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^b
Maximum Junction-to-Ambient^c
R_thJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
Limit
100
166
Unit
_C/W
www.vishay.com
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