SI2301BDS_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 20
0.100 at V_GS = - 4.5 V
0.150 at V_GS = - 2.5 V
I_D (A)^b
- 2.4
- 2.0
TO-236
(SOT-23)
FEATURES
• Halogen-free Option Available
G1
S2
3D
Top View
Si2301 BDS (L1)*
* Marking Code
Ordering Information: Si2301BDS-T1
Si2301BDS-T1-E3 (Lead (Pb)-free)
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^b
Pulsed Drain Current^a
T_A = 25 °C
T_A = 70 °C
I_D
- 2.4
- 1.9
- 2.2
- 1.8
A
I_DM
- 10
Continuous Source Current (Diode Conduction)^b
I_S
- 0.72
- 0.6
Power Dissipation^b
T_A = 25 °C
T_A = 70 °C
P_D
0.9
0.7
0.57
0.45
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Ambient^c
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
Symbol
R_thJA
Typical
120
140
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
Maximum
145
175
Unit
°C/W
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