SI2301ADS Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
P-Channel 2.5-V (G-S) MOSFET
Si2301ADS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.130 @ V_GS = –4.5 V
–20
0.190 @ V_GS = –2.5 V
I_D (A)^b
–2.0
–1.6
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^b
Power Dissipation^b
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–2.0
–1.6
–0.75
0.9
0.57
–20
"8
–10
–55 to 150
–1.75
–1.4
–0.6
0.7
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^b
Maximum Junction-to-Ambient^c
R_thJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
Typical
115
140
Maximum
140
175
Unit
_C/W
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