SI2300DS-T1-GE3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si2300DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.068 at V_GS = 4.5 V
30
0.085 at V_GS = 2.5 V
I_D (A)
3.6^a
3.4
Q_g (Typ.)
3 nC
TO-236
(SOT-23)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch
G1
S2
3D
Top View
Si2300DS (P2)*
* Marking Code
Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 12
T_C = 25 °C
3.6^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.0
3.1^{b, c}
T_A = 70 °C
2.5^{b, c}
A
Pulsed Drain Current
I_DM
15
T_C = 25 °C
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
1.4
0.9^{b, c}
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
1.1^{b, c}
W
T_A = 70 °C
0.7^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
Typical
90
60
Maximum
115
75
Unit
°C/W
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