SI1988DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

New Product
Dual N-Channel 20-V (D-S) MOSFET
Si1988DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.168 at V_GS = 4.5 V
20
0.200 at V_GS = 2.5 V
0.250 at V_GS = 1.8 V
I_D (A)^a
1.3^a
1.3^a
1.3^a
Q_g (Typ)
1.6 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch for Portable Applications
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 G₂
4 S₂
Marking Code
CF XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free)
D₁
G₁
S₁
N-Channel MOSFET
D₂
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
T_C = 25 °C
V_DS
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Soldering Recommendations (Peak Temperature)^{d, e}
Limit
20
±8
1.3^a
1.3^a
1.3^{a, b, c}
1.3^{a, b, c}
4
1.0
0.61^{b, c}
1.25
0.8
0.74^{b, c}
0.47^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 220 °C/W.
Symbol
R_thJA
R_thJF
Typical
130
80
Maximum
170
100
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74296
S-62109-Rev. A, 23-Oct-06
www.vishay.com
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