SI1970DH_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si1970DH
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.225 at V_GS = 4.5 V
30
0.345 at V_GS = 2.5 V
I_D (A)^a
1.3^a
1.3^a
Q_g (Typ)
1.15 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load switch for portable applications
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D₁
D₂
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 G₂
4 S₂
Marking Code
CD XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
G₁
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)^{d, e}
Limit
30
± 12
1.3^a
1.3^a
1.3^a
1.1
4
1.0
0.61^c
1.25
0.8
0.74^{b, c}
0.47^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 220 °C/W.
Symbol
R_thJA
R_thJF
Typical
130
80
Maximum
170
100
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74343
S-62441-Rev. A, 27-Nov-06
www.vishay.com
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