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| SI1967DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET | |||
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New Product
Dual P-Channel 20-V (D-S) MOSFET
Si1967DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.490 at VGS = - 4.5 V
- 20
0.640 at VGS = - 2.5 V
0.790 at VGS = - 1.8 V
ID (A)
- 1.3a
- 1.2
- 1.0
Qg (Typ.)
1.6 nC
FEATURES
⢠TrenchFET® Power MOSFET
⢠PWM Optimized
APPLICATIONS
⢠Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Marking Code
S1
S2
DF XX
Lot Traceability
and Date Code
G1
G2
Part # Code
Top View
Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free)
D1
D2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
±8
- 1.3a
- 1.1
- 1.0b, c
- 0.83b, c
-3
-1
- 0.6b, c
1.25
0.8
0.74b, c
0.47b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
tâ¤5s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 220 °C/W.
Symbol
RthJA
RthJF
Typical
130
80
Maximum
170
100
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68784
S-81726-Rev. A, 04-Aug-08
www.vishay.com
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