SI1967DH-T1-GE3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

Dual P-Channel 20 V (D-S) MOSFET
Si1967DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.490 at V_GS = - 4.5 V
- 20
0.640 at V_GS = - 2.5 V
0.790 at V_GS = - 1.8 V
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
I_D (A)
- 1.3^a
- 1.2
- 1.0
Q_g (Typ.)
1.6 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
S₁
S₂
Marking Code
DF XX
Lot Traceability
and Date Code
G₁
G₂
Part # Code
Top View
Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free)
Si1967DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
±8
- 1.3^a
- 1.1
- 1.0^{b, c}
- 0.83^{b, c}
-3
-1
- 0.6^{b, c}
1.25
0.8
0.74^{b, c}
0.47^{b, c}
- 55 to 150
D₂
P-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
Typical
130
80
Maximum
170
100
Unit
°C/W
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